March 17, 2021 / IGM

Patent granted

The Institute is happy to announce the granting of patent DE 10 2014 115 243: "Method for the fabrication of thin-film transistors together with other components on a substrate"

Researchers at the Institute for Large Area Microelectronics (IGM) have developed a method to manufacture thin film transistors (TFTs), micro-electro-mechanical devices and diodes parallely on the same substrate requiring only four photolithographic steps. Compared to conventional TFT manufacturing processes this means a reduction of process effort with additional benefit through the parallel fabrication of other device types.

Possible applications are expected especially in the area of low cost micro-electro-mechanical light modulators.

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