Researchers at the Institute for Large Area Microelectronics (IGM) have developed a method to manufacture thin film transistors (TFTs), micro-electro-mechanical devices and diodes parallely on the same substrate requiring only four photolithographic steps. Compared to conventional TFT manufacturing processes this means a reduction of process effort with additional benefit through the parallel fabrication of other device types.
Possible applications are expected especially in the area of low cost micro-electro-mechanical light modulators.